December 19th saw Southern University of Science and Technology welcome Professor I-Wei Chen from the University of Pennsylvania’s Department of Materials Science and Engineering to campus. He gave the 204th lecture in the SUSTech Lecture Series, and he spoke about “Probing Resistance Memory Using Fracture, Pressure and Coherent Electrons.” The lecture was hosted by Deputy Director Wang Hong of the College of Engineering.
I-Wei Chen is an internationally renowned expert in the study of nano-metal ReRAM based entirely on electronic structural properties. His current research interests include thin film memory devices, energy ceramic materials, and advanced biomedical applications for nanomaterials.
I-Wei Chen introduced the basic working principle of resistive random-access memory and the background knowledge of materials in a simple way. It is considered that resistive random-access memory (ReRAM) can realize repeated regulation of resistance performance, which is a very promising new high-density memory device.
I-Wei Chen focused on his team’s discovery of amorphous and wide-bandgap insulator materials, such as amorphous silicon, as a new type of resistive memory material, and further elaborated their research on the working mechanism of new resistive memory materials. By performing electrical tests under certain conditions on the resistive memory device, statistical information of different resistance states is obtained, which triggers the transformation of the local configuration, and the Aharonov-Bohm oscillation of the coherent electrons at the nanometer scale is found.
During the Q&A session following his lecture, I-Wei Chen took many questions from the students and faculty members, answering them with rigor and precision.
