Researchers make advances in wurtzite nitride (Al,Sc)N ferroelectric thin films
Scandium-doped aluminum nitride ((Al,Sc)N) is a promising material for next-generation nonvolatile memory and MEMS applications due to its high remanent polarization, low dielectric constant, high Curie temperature, and preeminent thermal stability. Its compatibility with CMOS processes is particularly critical, enabling back-end-of-line (BEOL) integration and opening new pathways for low-power computing, data storage, and microsystems. However, […]
2025-11-17|Research
